| CPC H01L 21/6715 (2013.01) [H01L 21/0273 (2013.01); H01L 21/67051 (2013.01)] | 9 Claims |
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1. A method for treating a substrate, the method comprising:
determining whether a photoresist film on the substrate is a film in which ions are implanted or ions are not implanted;
moving either a solvent nozzle to a process position to dispense organic solvent onto the substrate to remove the photoresist film, or an ozone nozzle moves with a lamp disposed adjacent to the ozone nozzle to the process position to dispense a liquid containing the ozone to remove organic residue on the substrate, based on whether ions have been implanted into the photoresist film;
dispensing the liquid containing ozone, by the ozone nozzle, or the organic solvent, by the solvent nozzle, onto the substrate to remove the photoresist film on the substrate; and
allocating a process position above the substrate,
wherein, when the photoresist film is a film in which the ions are not implanted, the dispensing includes:
a solvent dispensing step of moving the solvent nozzle from a standby position to the process position for dispensing the organic solvent onto the substrate to remove the photoresist film on the substrate; and
an ozone dispensing step of moving the ozone nozzle from an other standby position to the process position for dispensing the liquid containing ozone onto the substrate to remove organic residue on the substrate, after the solvent dispensing step, and
wherein, when the photoresist film is a film in which the ions are implanted, the dispensing includes:
the organic solvent is dispensed onto the substrate, in a state that the solvent nozzle is moved from the standby position to the process position, after the liquid containing the ozone is dispensed with UV light onto the substrate, in a state that the ozone nozzle and the UV light are moved from the other standby position to the process position.
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