	US 12,205,824 B2
	Patterning material including silicon-containing layer and method for semiconductor device fabrication
Szu-Ping Tung, Taipei (TW); Chun-Kai Chen, Kaohsiung (TW); Yi-Nien Su, Hsinchu (TW); and Tze-Liang Lee, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Jul. 21, 2023, as Appl. No. 18/357,038.
Application 18/357,038 is a continuation of application No. 17/213,723, filed on Mar. 26, 2021, granted, now 11,715,640.
Claims priority of provisional application 63/085,519, filed on Sep. 30, 2020.
Prior Publication US 2023/0377897 A1, Nov. 23, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 21/308 (2006.01); H01L 21/027 (2006.01); H01L 21/033 (2006.01); H01L 21/311 (2006.01)

CPC H01L 21/3081 (2013.01) [H01L 21/0274 (2013.01); H01L 21/0332 (2013.01); H01L 21/0337 (2013.01); H01L 21/311 (2013.01); H01L 21/31105 (2013.01); H01L 21/31116 (2013.01); H01L 21/31127 (2013.01); H01L 21/31138 (2013.01); H01L 21/31144 (2013.01)]

20 Claims

1. A method for lithography patterning, comprising:

providing a substrate;

forming a target layer over the substrate;

forming a patterning layer over the target layer, wherein the forming the patterning layer, includes:

using atomic layer deposition (ALD) process to deposit a first layer having an organic composition;

continuing the ALD process to deposit a second layer including over 50 atomic percent of silicon, the second layer deposited directly on the first layer, and

during the ALD process, delivering precursors to the substrate to form a continuous variation in a carbon (C) to silicon (Si) ratio in the first layer and the second layer; and

depositing a patterning layer on the second layer.