| CPC H01J 37/3435 (2013.01) [C23C 14/3407 (2013.01); C23C 14/35 (2013.01); C23C 14/54 (2013.01); H01J 37/32449 (2013.01); H01J 37/3423 (2013.01); H01J 37/3438 (2013.01); H01J 37/3441 (2013.01); H01J 37/345 (2013.01); H01J 37/3476 (2013.01); H01J 37/3405 (2013.01)] | 16 Claims |
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1. A sputtering apparatus comprising:
a placement portion on which a target having a first opening is placed;
an anode and a metal member electrically insulated from each other; and
a magnet inside the placement portion configured to form a magnetic field along a surface of the target toward the first opening,
wherein the target is disposed around the metal member,
wherein the metal member is set to a ground potential or a floating potential,
wherein the metal member has a second opening smaller than the first opening,
wherein the placement portion has a recess portion that at least partially overlaps the first opening as viewed in a Z1/Z2 direction from a film formation object to the target,
wherein the placement portion at least partially overlaps the target as viewed in the Z1/Z2 direction, and
wherein the anode is disposed inside the recess portion in a direction X, in a direction Y, or in both a direction X and a direction Y, perpendicular to the Z1/Z2 direction and at least part of the metal member is disposed inside the first opening in the direction X, in the direction Y, or in both the direction X and the direction Y.
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