US 12,205,628 B2
Sense amplifier, method for driving sense amplifier, and memory
Sungsoo Chi, Hefei (CN)
Assigned to CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei (CN)
Filed by CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei (CN)
Filed on Feb. 8, 2023, as Appl. No. 18/166,476.
Application 18/166,476 is a continuation of application No. PCT/CN2022/104447, filed on Jul. 7, 2022.
Claims priority of application No. 202210027454.2 (CN), filed on Jan. 11, 2022.
Prior Publication US 2023/0223072 A1, Jul. 13, 2023
Int. Cl. G11C 11/40 (2006.01); G11C 11/4091 (2006.01)
CPC G11C 11/4091 (2013.01) 20 Claims
OG exemplary drawing
 
1. A sense amplifier, comprising:
an amplifying circuit, comprising:
a first P-type transistor, having a first terminal connected to a third node, a second terminal connected to a first node, and a gate connected to a first bit line;
a second P-type transistor, having a first terminal connected to the third node, a second terminal connected to a second node, and a gate connected to a second bit line;
a first N-type transistor, having a first terminal connected to the first node, a second terminal connected to a fourth node, and a gate connected to the first bit line; and
a second N-type transistor, having a first terminal connected to the second node, a second terminal connected to the fourth node, and a gate connected to the second bit line; and
a voltage equalizing circuit, connected between the first node and the second node, and configured to connect the first node and the second node in a charge sharing stage.