US 12,204,841 B2
Modeling method and apparatus, computer device and storage medium
Kun Weng, Hefei (CN)
Assigned to CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei (CN)
Filed by CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei (CN)
Filed on Feb. 14, 2022, as Appl. No. 17/650,862.
Application 17/650,862 is a continuation of application No. PCT/CN2021/120533, filed on Sep. 26, 2021.
Claims priority of application No. 202110554254.8 (CN), filed on May 20, 2021.
Prior Publication US 2022/0374580 A1, Nov. 24, 2022
Int. Cl. G06F 30/3947 (2020.01); H01L 23/00 (2006.01); H01L 23/48 (2006.01); H01L 25/065 (2023.01)
CPC G06F 30/3947 (2020.01) [H01L 23/481 (2013.01); H01L 24/05 (2013.01); H01L 25/0657 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/05025 (2013.01); H01L 2224/0508 (2013.01); H01L 2224/05111 (2013.01); H01L 2224/05139 (2013.01); H01L 2224/05147 (2013.01); H01L 2224/05155 (2013.01); H01L 2225/06513 (2013.01); H01L 2225/06541 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A modeling method, comprising:
acquiring electrical parameters of each sub-structure in a through silicon via (TSV) structure;
obtaining an electrical topology network model according to a connection relationship of each TSV structure between two dies; and
obtaining a simulation model for simulation based on the electrical topology network model and the electrical parameters.