| CPC G06F 30/3308 (2020.01) [G06F 30/327 (2020.01); G06F 30/33 (2020.01); G06T 17/10 (2013.01); G06T 17/205 (2013.01)] | 19 Claims |
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1. A method of fabricating a semiconductor, the method comprising:
simulating one semiconductor process of a plurality of semiconductor processes performed on a semiconductor model, comprising:
generating first polygon meshes which define final surfaces of at least one semiconductor model;
converting the first polygon meshes to first level sets, the first level sets comprising n level sets, wherein the converting comprises repeatedly selecting a level set until selecting an nth level set, the level sets excluding surfaces of different bodies of the at least one semiconductor model in contact with one another;
performing a logical operation on the first level sets to generate second level sets, the logical operation corresponding to the one semiconductor process and being selected from a plurality of logical operations corresponding to the plurality of semiconductor processes; and
converting the second level sets to second polygon meshes; and
fabricating the semiconductor using a result of the simulating,
wherein the converting of the first polygon meshes to the first level sets comprises:
constructing grids in a certain coordinate system to allow a target body, which is formed by the first polygon meshes, to be placed in grids;
calculating distance values at selected intersection points, which are positioned adjacent to surfaces of the target body, among intersection points of the grids; and
picking the distance values as one set of the first level sets,
wherein, in each of the intersection points, partial distance values corresponding to each of a number axis of the certain coordinate system are calculated as a portion of the distance values, and
wherein the distance values comprise point-based distance values, which are obtained at a specific intersection point, and
wherein, based on a first point-based distance value, among the point-based distance values, being larger than a length of each grid, the first point-based distance value is assigned a default value that is larger than a maximum value of a range of the distance values.
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