US 12,204,763 B2
Method and non-transitory computer-readable storage medium and apparatus for dynamically updating optimization read voltage table
Chun-Yi Chen, Hsinchu County (TW); and Hsiao-Te Chang, Zhubei (TW)
Assigned to SILICON MOTION, INC., Zhubei (TW)
Filed by Silicon Motion, Inc., Zhubei (TW)
Filed on Dec. 14, 2022, as Appl. No. 18/080,852.
Claims priority of provisional application 63/298,287, filed on Jan. 11, 2022.
Claims priority of application No. 202210420246.9 (CN), filed on Apr. 21, 2022.
Prior Publication US 2023/0221873 A1, Jul. 13, 2023
Int. Cl. G06F 3/00 (2006.01); G06F 3/06 (2006.01)
CPC G06F 3/0619 (2013.01) [G06F 3/0653 (2013.01); G06F 3/0659 (2013.01); G06F 3/0679 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method for dynamically updating an optimization read voltage (RV) table, performed by a micro-controller unit of a flash controller, comprising:
receiving a first request for read-performance data from a host side;
obtaining a data-read transaction and transmitting the data-read transaction to the host side in response to the first request, thereby enabling the data-performance transaction to be used in an update of the optimization RV table for a designated memory-cell type, wherein the data-read transaction comprises a first current environmental parameter of a NAND-flash module, the designated memory-cell type and a bit error rate (BER), and the first current environmental parameter of the NAND-flash module describes a first data storage characteristic currently measured for the NAND-flash module;
receiving a second request for updating the optimization RV table for the designated memory-cell type from the host side; and
programming a plurality of records of an updated optimization RV table for the designated memory-cell type into a designated location of the NAND-flash module after listening to a in response to the second request, wherein each record comprises one set of RV parameters and a first environmental parameter associated with the set of RV parameters, and the first environmental parameter describes a second data storage characteristic applied for a specific NAND-flash module.