US 12,204,253 B2
In-situ lithography pattern enhancement with localized stress treatment tuning using heat zones
Andrew Weloth, Albany, NY (US); Michael Murphy, Latham, NY (US); Daniel J. Fulford, Ballston Lake, NY (US); Steven Gueci, Gansevoort, NY (US); and David C. Conklin, Saratoga Springs, NY (US)
Assigned to Tokyo Electron Limited, Tokyo (JP)
Filed by Tokyo Electron Limited, Tokyo (JP)
Filed on Mar. 1, 2024, as Appl. No. 18/593,330.
Application 18/593,330 is a division of application No. 18/171,989, filed on Feb. 21, 2023, granted, now 11,994,807.
Claims priority of provisional application 63/337,708, filed on May 3, 2022.
Prior Publication US 2024/0201601 A1, Jun. 20, 2024
Int. Cl. G03F 7/00 (2006.01)
CPC G03F 7/70625 (2013.01) [G03F 7/70875 (2013.01)] 9 Claims
OG exemplary drawing
 
1. A wafer processing device, comprising:
a first hot plate configured to heat a wafer, the first hot plate generating uniform heating across a surface of the first hot plate;
a second hot plate configured to heat the wafer, the second hot plate having multiple heating zones with each heating zone independently controllable such that each heating zone can be set to a temperature value independent of other heating zones; and
a controller configured to control the first hot plate to generate the uniform heating, receive a bow measurement from wafer curvature measurement of the wafer, and set the multiple heating zones of the second hot plate to their respective temperature values that correspond to the bow measurement.