US 12,204,184 B2
Structure for an optoelectronics platform and method of fabricating a structure for an optoelectronics platform
Yu Cao, Singapore (SG); Shawn Yohanes Siew, Singapore (SG); Aaron James Danner, Singapore (SG); and Thirumalai Venky Venkatesan, Singapore (SG)
Assigned to National University of Singapore, Singapore (SG)
Appl. No. 17/440,077
Filed by National University of Singapore, Singapore (SG)
PCT Filed Mar. 26, 2020, PCT No. PCT/SG2020/050166
§ 371(c)(1), (2) Date Sep. 16, 2021,
PCT Pub. No. WO2020/197500, PCT Pub. Date Oct. 1, 2020.
Claims priority of application No. 10201902663T (SG), filed on Mar. 26, 2019; and application No. 10201903163Y (SG), filed on Apr. 9, 2019.
Prior Publication US 2022/0365379 A1, Nov. 17, 2022
Int. Cl. G02F 1/035 (2006.01); G02F 1/01 (2006.01); G02F 1/05 (2006.01); G02F 1/355 (2006.01); G02F 1/21 (2006.01)
CPC G02F 1/035 (2013.01) [G02F 1/0136 (2013.01); G02F 1/05 (2013.01); G02F 1/355 (2013.01); G02F 1/212 (2021.01)] 20 Claims
OG exemplary drawing
 
1. A structure for an optoelectronics platform comprising:
a substrate, and
a BaTiO3 (BTO) film deposited on a surface of the substrate and having a thickness such that the BTO film is configured for single mode operation with one or more polarization configurations with optical confinement in the BTO film at a wavelength range of operation from about 400 nm to 1600 nm;
wherein the substrate provides vertical refractive index confinement in a direction perpendicular to the surface of the substrate for the single mode operation optical confinement in the BTO film at the wavelength range of operation; and
wherein the substrate comprises one of a group consisting of La0.3Sr0.7Al0.65Ta0.35O3 (LSAT), LaSrAlO4 (LSAO), GdScO3, SmScO3, TbScO3, NdScO3, HoScO3, ErScO3, TmScO3, YbScO3, LuScO3, PrScO3, LaScO3, YScO3.