	US 12,204,005 B2
	Magnetoresistive sensor element having a wide linear response and robust nominal performance and manufacturing method thereof
Jeffrey Childress, San Jose, CA (US); Nikita Strelkov, Meylan (FR); and Andrey Timopheev, Vif (FR)
Assigned to Allegro MicroSystems, LLC, Manchester, NH (US)
Appl. No. 18/251,296
Filed by Allegro MicroSystems, LLC, Manchester, NH (US)
PCT Filed Oct. 28, 2021, PCT No. PCT/IB2021/059971 § 371(c)(1), (2) Date May 1, 2023, PCT Pub. No. WO2022/096992, PCT Pub. Date May 12, 2022.
Claims priority of application No. 20315443 (EP), filed on Nov. 3, 2020.
Prior Publication US 2024/0019509 A1, Jan. 18, 2024
Int. Cl. G01R 33/09 (2006.01); G01R 33/00 (2006.01); H01F 1/00 (2006.01)

CPC G01R 33/098 (2013.01) [G01R 33/0052 (2013.01); G01R 33/093 (2013.01); H01F 1/0009 (2013.01)]

8 Claims

1. A magnetoresistive element for a magnetic sensor, the magnetoresistive element comprising a tunnel barrier layer included between a reference layer having a fixed reference magnetization and a sense layer having a free sense magnetization;

the sense magnetization comprising a stable vortex configuration in the absence of an applied magnetic field;

the magnetoresistive element further comprising a reference pinning layer in contact with the reference layer and pining the reference magnetization by exchange-bias at a first blocking temperature; and

a sense pinning layer in contact with the sense layer and pining the sense magnetization by exchange-bias at a second blocking temperature lower that the first blocking temperature,

wherein the sense layer has a thickness between 15 nm and 80 nm, and

wherein the strength of exchange-bias between the sense pinning layer and the sense layer is between 2×10⁻⁸J/cm²and 4×10⁻⁸J/cm².