US 12,202,731 B2
Method for preparing silicon composite
Jong Oh Choi, Gangwon-do (KR); Min Sun Kim, Gangwon-do (KR); and Jong Sik Yoo, Seoul (KR)
Assigned to KOREA METAL SILICON CO., LTD., Gangwon-do (KR)
Appl. No. 17/433,547
Filed by KOREA METAL SILICON CO., LTD., Gangwon-do (KR)
PCT Filed Oct. 22, 2020, PCT No. PCT/KR2020/014453
§ 371(c)(1), (2) Date Aug. 24, 2021,
PCT Pub. No. WO2021/091127, PCT Pub. Date May 14, 2021.
Claims priority of application No. 10-2019-0139739 (KR), filed on Nov. 4, 2019.
Prior Publication US 2022/0259050 A1, Aug. 18, 2022
Int. Cl. C01B 33/02 (2006.01); C01B 32/05 (2017.01); C01B 32/21 (2017.01)
CPC C01B 33/02 (2013.01) [C01B 32/05 (2017.08); C01B 32/21 (2017.08); C01P 2004/80 (2013.01); C01P 2006/40 (2013.01)] 10 Claims
 
1. A method of preparing a silicon composite, the method comprising:
forming a silicon solution by wet-grinding a silicon raw material;
forming silicon fine powder by spray-drying the silicon solution;
disintegrating the silicon fine powder;
forming a dispersion by coating the silicon fine powder with a first pitch;
forming a first composite by coating the dispersion with a second pitch;
forming a second composite by carbonizing the first composite; and
classifying the second composite according to a preset particle size reference, and
wherein the forming of the dispersion comprises:
forming a core by dispersing the silicon fine powder in graphite; and
dry-coating the core with the first pitch,
wherein, in the dry-coating of the core with the first pitch, the core is dry-coated with the first pitch at a temperature of 120° C. or more and 150° C., and a content of the first pitch in the dispersion is 15% or more and 16% or less in weight percent.