US 12,202,094 B2
System and method for chemical mechanical polishing pad replacement
Shih-Chung Chen, Hsinchu (TW); Wei-Kang Tu, Hsinchu (TW); Ching-Wen Cheng, Zhubei (TW); and Chun Yan Chen, Zhubei (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Hsinchu (TW)
Filed on Jan. 20, 2022, as Appl. No. 17/579,775.
Claims priority of provisional application 63/219,911, filed on Jul. 9, 2021.
Prior Publication US 2023/0009839 A1, Jan. 12, 2023
Int. Cl. B24B 41/00 (2006.01); B24B 29/00 (2006.01); B24B 49/18 (2006.01)
CPC B24B 41/005 (2013.01) [B24B 29/00 (2013.01); B24B 49/186 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method for in-situ chemical mechanical polishing (CMP) pad replacement in an associated CMP tool, comprising:
receiving, at a controller including a processor in communication with memory, an output from a pad wear detection module corresponding to a state of a CMP pad on a first platen of a plurality of platens of a platen carrier;
positioning a pad tape replacement module proximate to the first platen responsive to an output of the pad wear detection module, the pad tape replacement module including a pad tape supply having a plurality of pads disposed therein;
rotating the platen carrier toward a pad tearer tool movably positioned adjacent to the platen carrier;
engaging the pad tearer tool to remove the CMP pad on the first platen; and
rolling, via a pressure roller of the pad tape replacement module, a pad disposed in the pad tape supply onto a second platen of the plurality of platens of the platen carrier.