US 11,877,514 B2
Method for producing a crystalline layer of PZT material by transferring a seed layer of SrTiO3 to a silicon carrier substrate and epitaxially growing the crystalline layer of PZT, and substrate for epitaxial growth of a crystalline layer of PZT
Bruno Ghyselen, Seyssinet (FR)
Assigned to Soitec, Bernin (FR)
Appl. No. 17/042,657
Filed by Soitec, Bernin (FR)
PCT Filed Mar. 26, 2019, PCT No. PCT/IB2019/000201
§ 371(c)(1), (2) Date Sep. 28, 2020,
PCT Pub. No. WO2019/186264, PCT Pub. Date Oct. 3, 2019.
Claims priority of application No. 1800253 (FR), filed on Mar. 28, 2018.
Prior Publication US 2021/0074906 A1, Mar. 11, 2021
This patent is subject to a terminal disclaimer.
Int. Cl. C30B 33/06 (2006.01); H10N 30/079 (2023.01); C30B 25/18 (2006.01); C30B 29/22 (2006.01); H10N 30/853 (2023.01); H10N 30/00 (2023.01)
CPC H10N 30/079 (2023.02) [C30B 25/183 (2013.01); C30B 29/22 (2013.01); C30B 33/06 (2013.01); H10N 30/10516 (2023.02); H10N 30/8554 (2023.02)] 19 Claims
OG exemplary drawing
 
1. A process for producing a crystalline layer of PZT material, comprising:
transferring a monocrystalline seed layer of SrTiO3 material to a carrier substrate of silicon material, the carrier substrate of silicon material comprising two silicon wafers joined together and a detachable interface buried within the carrier substrate; and
epitaxially growing the crystalline layer of PZT material on the monocrystalline seed layer of SrTiO3 material,
wherein transferring the monocrystalline seed layer of SrTiO3 material to the carrier substrate of silicon material comprises joining a monocrystalline substrate of SrTiO3 material to the carrier substrate of silicon material by molecular adhesion of the monocrystalline substrate of SrTiO3 material to the carrier substrate of silicon material, the molecular adhesion comprising bonding the monocrystalline substrate of SrTiO3 material to the carrier substrate of silicon material at ambient temperature and annealing a bonding interface between the monocrystalline substrate of SrTiO3 material and the carrier substrate of silicon material to consolidate the bonding interface.