US 11,877,501 B2
Post-processing method of quantum dot light-emitting diode
Jie Zhang, Huizhou (CN); and Chaoyu Xiang, Huizhou (CN)
Assigned to TCL Technology Group Corporation, Huizhou (CN)
Appl. No. 17/419,647
Filed by TCL Technology Group Corporation, Huizhou (CN)
PCT Filed Sep. 17, 2019, PCT No. PCT/CN2019/106142
§ 371(c)(1), (2) Date Jun. 29, 2021,
PCT Pub. No. WO2020/134207, PCT Pub. Date Jul. 2, 2020.
Claims priority of application No. 201811635589.7 (CN), filed on Dec. 29, 2018.
Prior Publication US 2022/0077393 A1, Mar. 10, 2022
Int. Cl. H01L 51/00 (2006.01); H10K 71/40 (2023.01); H10K 50/81 (2023.01); H10K 50/115 (2023.01); H10K 50/828 (2023.01); H10K 71/00 (2023.01); H10K 102/00 (2023.01)
CPC H10K 71/40 (2023.02) [H10K 50/115 (2023.02); H10K 50/81 (2023.02); H10K 50/828 (2023.02); H10K 71/00 (2023.02); H10K 2102/351 (2023.02)] 16 Claims
OG exemplary drawing
 
1. A post-processing method of a quantum dot light-emitting diode, comprising:
providing a quantum dot light-emitting diode, and the quantum dot light-emitting diode comprising a cathode and an anode disposed oppositely, and a quantum dot light-emitting layer arranged between the cathode and the anode;
energizing the cathode and anode of the quantum dot light-emitting diode, and performing a light irradiation treatment on the quantum dot light-emitting diode.