US 11,877,433 B2
Storage node contact structure of a memory device
Pin-Hong Chen, Tainan (TW); Tsun-Min Cheng, Changhua County (TW); Chih-Chieh Tsai, Kaohsiung (TW); Tzu-Chieh Chen, Pingtung County (TW); Kai-Jiun Chang, Taoyuan (TW); Chia-Chen Wu, Nantou County (TW); Yi-An Huang, New Taipei (TW); Yi-Wei Chen, Taichung (TW); Hsin-Fu Huang, Taichung (TW); Chi-Mao Hsu, Tainan (TW); Li-Wei Feng, Tainan (TW); Ying-Chiao Wang, Changhua County (TW); and Chung-Yen Feng, Hsinchu County (TW)
Assigned to UNITED MICROELECTRONICS CORP., Hsin-Chu (TW); and Fujian Jinhua Integrated Circuit Co., Ltd., Quanzhou (CN)
Filed by UNITED MICROELECTRONICS CORP., Hsin-Chu (TW); and Fujian Jinhua Integrated Circuit Co., Ltd., Quanzhou (CN)
Filed on Jul. 16, 2020, as Appl. No. 16/931,397.
Application 16/931,397 is a division of application No. 15/922,899, filed on Mar. 15, 2018, granted, now 10,756,090.
Claims priority of application No. 201710239078.2 (CN), filed on Apr. 13, 2017.
Prior Publication US 2020/0350317 A1, Nov. 5, 2020
Int. Cl. H01L 23/48 (2006.01); H10B 12/00 (2023.01); H01L 23/532 (2006.01); H01L 23/522 (2006.01); H01L 21/285 (2006.01); H01L 23/528 (2006.01); H01L 21/768 (2006.01); H01L 49/02 (2006.01); H01L 21/02 (2006.01)
CPC H10B 12/0335 (2023.02) [H01L 21/28568 (2013.01); H01L 21/7684 (2013.01); H01L 21/7685 (2013.01); H01L 21/76831 (2013.01); H01L 21/76876 (2013.01); H01L 21/76877 (2013.01); H01L 23/528 (2013.01); H01L 23/5226 (2013.01); H01L 23/53266 (2013.01); H01L 28/91 (2013.01); H10B 12/31 (2023.02); H10B 12/315 (2023.02); H01L 21/0217 (2013.01); H01L 21/0228 (2013.01)] 5 Claims
OG exemplary drawing
 
1. A storage node contact structure of a memory device, comprising:
a substrate having a dielectric layer, the dielectric comprises a recess;
a first tungsten metal layer disposed in the recess and filling the recess;
a spacer, disposed beside the first tungsten metal layer and directly contacts the first tungsten metal layer, wherein the spacer does not contact a bottom surface of the first tungsten metal layer directly;
a second tungsten metal layer disposed on the first tungsten metal layer, wherein the second tungsten metal layer is formed by a physical vapor deposition (PVD) method; and
an adhesive layer disposed between the first tungsten metal layer and the second tungsten metal layer, wherein a material of the adhesive layer comprises titanium or tantalum, wherein the adhesive layer directly contacts a top surface of the dielectric layer, wherein a width of the adhesive layer is same as a width of the second tungsten metal layer, and the width of the adhesive layer is larger than a width of the first tungsten metal layer.