US 11,876,349 B2
Semiconductor device, semiconductor laser, and method of producing a semiconductor device
Masahiro Murayama, Miyagi (JP)
Assigned to SONY SEMICONDUCTOR SOLUTIONS CORPORATION, Kanagawa (JP)
Filed by SONY SEMICONDUCTOR SOLUTIONS CORPORATION, Kanagawa (JP)
Filed on Aug. 13, 2021, as Appl. No. 17/401,735.
Application 17/401,735 is a division of application No. 16/334,738, granted, now 11,121,524, previously published as PCT/JP2017/033534, filed on Sep. 15, 2017.
Claims priority of application No. 2016-214555 (JP), filed on Nov. 1, 2016.
Prior Publication US 2021/0376571 A1, Dec. 2, 2021
Int. Cl. H01S 5/042 (2006.01); H01S 5/22 (2006.01); H01S 5/20 (2006.01); H01S 5/32 (2006.01); H01L 31/0224 (2006.01)
CPC H01S 5/22 (2013.01) [H01S 5/04253 (2019.08); H01S 5/2059 (2013.01); H01S 5/321 (2013.01); H01S 5/3205 (2013.01); H01L 31/022491 (2013.01)] 9 Claims
OG exemplary drawing
 
1. A method of producing a semiconductor device, the method comprising:
preparing a laminate that includes:
a first semiconductor layer having a first conductivity type;
a second semiconductor layer having a second conductivity type; and
an active layer between the first semiconductor layer and the second semiconductor layer, wherein
the active layer is in direct contact with the first semiconductor layer and the second semiconductor layer,
the active layer is on the second semiconductor layer, and
the active layer entirely covers a surface of the second semiconductor layer;
forming a transparent conductive layer on the first semiconductor layer, wherein the transparent conductive layer comprises a transparent conductive material;
forming a mask structure on the transparent conductive layer, wherein the mask structure is processed into a stripe shape;
removing at least a part of the transparent conductive layer and the first semiconductor layer, based on the mask structure, as an etching mask;
forming a pad electrode on the transparent conductive layer; and
forming an intermediate layer between the pad electrode and the transparent conductive layer by heat treatment.