CPC H01L 33/007 (2013.01) [H01L 33/0025 (2013.01); H01L 33/06 (2013.01); H01L 33/325 (2013.01)] | 20 Claims |
1. A method of fabricating a device, the method comprising:
using molecular beam epitaxy (MBE), depositing a p-type dopant, Group III elements, and a Group V element in a first layer above a substrate; and
forming a liquid metal layer on a growth interface of the first layer while the p-type dopant, the Group III elements, and the Group V element are being deposited in the layer, wherein the liquid metal layer is smooth and conformal across the first layer throughout said forming.
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