US 11,876,147 B2
Enhanced doping efficiency of ultrawide bandgap semiconductors by metal-semiconductor assisted epitaxy
Xianhe Liu, Ann Arbor, MI (US); Ayush Pandey, Ann Arbor, MI (US); and Zetian Mi, Ann Arbor, MI (US)
Assigned to THE REGENTS OF THE UNIVERSITY OF MICHIGAN, Ann Arbor, MI (US)
Filed by THE REGENTS OF THE UNIVERSITY OF MICHIGAN, Ann Arbor, MI (US)
Filed on May 28, 2019, as Appl. No. 16/424,157.
Claims priority of provisional application 62/838,842, filed on Apr. 25, 2019.
Claims priority of provisional application 62/676,828, filed on May 25, 2018.
Prior Publication US 2019/0363218 A1, Nov. 28, 2019
Int. Cl. H01L 33/00 (2010.01); H01L 33/06 (2010.01); H01L 33/32 (2010.01)
CPC H01L 33/007 (2013.01) [H01L 33/0025 (2013.01); H01L 33/06 (2013.01); H01L 33/325 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of fabricating a device, the method comprising:
using molecular beam epitaxy (MBE), depositing a p-type dopant, Group III elements, and a Group V element in a first layer above a substrate; and
forming a liquid metal layer on a growth interface of the first layer while the p-type dopant, the Group III elements, and the Group V element are being deposited in the layer, wherein the liquid metal layer is smooth and conformal across the first layer throughout said forming.