US 11,876,135 B2
Epitaxial source/drain structures for multigate devices and methods of fabricating thereof
Chen-Ming Lee, Yangmei (TW); I-Wen Wu, Hsinchu (TW); Po-Yu Huang, Hsinchu (TW); Fu-Kai Yang, Hsinchu (TW); and Mei-Yun Wang, Hsin-Chu (TW)
Assigned to TAIWAN SEMICONDUCTORMANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu (TW)
Filed on Jul. 23, 2021, as Appl. No. 17/383,989.
Claims priority of provisional application 63/142,886, filed on Jan. 28, 2021.
Prior Publication US 2022/0238713 A1, Jul. 28, 2022
Int. Cl. H01L 29/78 (2006.01); H01L 27/12 (2006.01); H01L 29/786 (2006.01); H01L 29/423 (2006.01); H01L 29/06 (2006.01)
CPC H01L 29/7848 (2013.01) [H01L 27/127 (2013.01); H01L 27/1266 (2013.01); H01L 29/78621 (2013.01); H01L 27/1218 (2013.01); H01L 29/0673 (2013.01); H01L 29/42392 (2013.01); H01L 29/785 (2013.01); H01L 29/78603 (2013.01); H01L 29/78696 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor structure comprising:
a dielectric substrate; and
a channel layer, a gate disposed over the channel layer, and an epitaxial source/drain structure disposed adjacent to the channel layer, wherein the channel layer, the gate, and the epitaxial source/drain structure are disposed over the dielectric substrate, and further wherein the epitaxial source/drain structure includes:
an inner portion having a first dopant concentration, wherein the inner portion physically contacts the dielectric substrate, and
an outer portion having a second dopant concentration, wherein the second dopant concentration is less than the first dopant concentration and the outer portion is disposed between the inner portion and the channel layer.