US 11,876,131 B2
Semiconductor device
Yuichi Hashizume, Matsumoto (JP); Keishirou Kumada, Matsumoto (JP); Yoshihisa Suzuki, Matsumoto (JP); and Yasuyuki Hoshi, Matsumoto (JP)
Assigned to FUJI ELECTRIC CO., LTD., Kawasaki (JP)
Filed by FUJI ELECTRIC CO., LTD., Kawasaki (JP)
Filed on Mar. 27, 2019, as Appl. No. 16/366,379.
Claims priority of application No. 2018-102844 (JP), filed on May 29, 2018.
Prior Publication US 2019/0371932 A1, Dec. 5, 2019
Int. Cl. H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 29/16 (2006.01); H01L 29/45 (2006.01)
CPC H01L 29/7804 (2013.01) [H01L 29/1608 (2013.01); H01L 29/45 (2013.01); H01L 29/66992 (2013.01); H01L 29/7813 (2013.01)] 8 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a semiconductor substrate of a first conductivity type including a semiconductor material having a bandgap that is wider than that of silicon;
a second-conductivity-type region of a second conductivity type provided in a surface layer of a first main surface of the semiconductor substrate;
a barrier metal disposed on the second-conductivity-type region;
an insulated-gate field effect transistor with a trench gate structure, including a base region and a source pad, the base region comprising the second-conductivity-type region, the source pad being electrically connected to the second-conductivity-type region via the barrier metal;
an insulating layer disposed on the semiconductor substrate;
a second-conductivity-type poly-silicon layer of the second conductivity type provided on the first main surface of the semiconductor substrate, via the insulating layer;
a first-conductivity-type poly-silicon layer of the first conductivity type provided on the first main surface of the semiconductor substrate next to the second-conductivity-type poly-silicon layer, via the insulating layer, a side face of the first-conductivity-type poly-silicon layer being in contact with a side face of the second-conductivity-type poly-silicon layer; and
a diode formed by a pn junction between the second-conductivity-type poly-silicon layer and the first-conductivity-type poly-silicon layer, the diode including an anode pad and a cathode pad, the anode pad being electrically connected to and in direct contact with the second-conductivity-type poly-silicon layer, the cathode pad being electrically connected to the first-conductivity-type poly-silicon layer, wherein
the source pad is a metal film containing aluminum as a main constituent,
the anode pad is a metal film containing aluminum as a main constituent, the metal film of the anode pad being made of a single layer, being in direct contact with the second-conductivity-type poly-silicon layer and being free of any barrier metal,
the cathode pad is a metal film containing aluminum as a main constituent, the metal film of the cathode pad being made of a single layer, being in direct contact with the first-conductivity-type poly-silicon layer and being free of any barrier metal, and
the source pad is apart from the anode pad and the cathode pad in a plan view of the semiconductor device.