US 11,876,116 B2
Method for manufacturing a grid
Adolf Schoner, Hässelby (SE); Sergey Reshanov, Upplands-Väsby (SE); Nicolas Thierry-Jebali, Stockholm (SE); and Hossein Elahipanah, Sollentuna (SE)
Assigned to II-VI DELAWARE, INC., Wilmington, DE (US)
Filed by II-VI Delaware, Inc., Wilmington, DE (US)
Filed on Apr. 27, 2022, as Appl. No. 17/660,888.
Application 17/660,888 is a continuation of application No. 16/647,094, granted, now 11,342,423, previously published as PCT/EP2018/074908, filed on Sep. 14, 2018.
Claims priority of application No. 17511387 (SE), filed on Sep. 15, 2017.
Prior Publication US 2022/0254887 A1, Aug. 11, 2022
Int. Cl. H01L 21/00 (2006.01); H01L 29/40 (2006.01); H01L 21/02 (2006.01); H01L 21/265 (2006.01); H01L 21/285 (2006.01); H01L 21/306 (2006.01); H01L 21/3065 (2006.01); H01L 21/324 (2006.01)
CPC H01L 29/402 (2013.01) [H01L 21/02529 (2013.01); H01L 21/02634 (2013.01); H01L 21/26513 (2013.01); H01L 21/28537 (2013.01); H01L 21/3065 (2013.01); H01L 21/30625 (2013.01); H01L 21/324 (2013.01); H01L 29/401 (2013.01)] 16 Claims
OG exemplary drawing
 
1. A method for manufacture of a grid structure in a SiC semiconductor material, the method comprising the steps of:
(a) providing a substrate comprising a doped semiconductor SiC material, the substrate comprising a first layer of a first conductivity type;
(b) by epitaxial growth adding at least one doped semiconductor SiC material to form separated second regions of a second conductivity type opposite to the first conductivity type on the first layer;
(c) by ion implantation at least once at a stage selected from the group consisting of after step (a) and after step (b), implanting ions in the first layer to form first regions of a second conductivity type opposite to the first conductivity type, wherein each of the separated second regions is in contact with one of the first regions; and
(d) by epitaxial growth, growing a second layer on the separated second regions and on the first layer.