US 11,876,077 B2
Semiconductor device and method of manufacturing the same
Yi-Jen Lo, New Taipei (TW); Hsih Yang Chiu, Taoyuan (TW); Ching Hung Chang, Taoyuan (TW); and Chiang-Lin Shih, New Taipei (TW)
Assigned to NANYA TECHNOLOGY CORPORATION, New Taipei (TW)
Filed by NANYA TECHNOLOGY CORPORATION, New Taipei (TW)
Filed on Mar. 12, 2021, as Appl. No. 17/199,458.
Prior Publication US 2022/0293561 A1, Sep. 15, 2022
Int. Cl. H01L 25/065 (2023.01); H01L 25/00 (2006.01); H01L 23/00 (2006.01)
CPC H01L 25/0657 (2013.01) [H01L 24/08 (2013.01); H01L 24/89 (2013.01); H01L 25/50 (2013.01); H01L 2224/08146 (2013.01); H01L 2224/80895 (2013.01); H01L 2225/06541 (2013.01)] 9 Claims
OG exemplary drawing
 
1. A method of manufacturing a semiconductor device, comprising:
bonding a second device wafer to a first device wafer, such that a first bonding interface including a fusion-bonding interface is formed between the first device wafer and the second device wafer, wherein the first device wafer and the second device wafer are the same kind of device wafer,
wherein the first device wafer comprises a first dielectric layer and a first conductive portion, the second device wafer comprises a second dielectric layer and a second conductive portion, and the fusion bonding interface is formed by entire surfaces between the first dielectric layer and the second dielectric layer only;
forming an opening, wherein the opening penetrates through the first bonding interface to expose a portion of the second device wafer and a portion of the first device wafer, wherein the first conductive portion and the second conductive portion are exposed by the opening.