US 11,876,066 B2
Palladium-coated copper bonding wire, wire bonding structure, semiconductor device, and manufacturing method of semiconductor device
Hiroyuki Amano, Saga (JP); Yuki Antoku, Saga (JP); Takeshi Kuwahara, Saga (JP); and Tsukasa Ichikawa, Saga (JP)
Assigned to TANAKA DENSHI KOGYO K.K., Saga (JP)
Filed by TANAKA DENSHI KOGYO K. K., Saga (JP)
Filed on Aug. 6, 2021, as Appl. No. 17/395,874.
Application 17/395,874 is a continuation of application No. PCT/JP2020/004483, filed on Feb. 6, 2020.
Claims priority of application No. 2019-021837 (JP), filed on Feb. 8, 2019.
Prior Publication US 2021/0366867 A1, Nov. 25, 2021
Int. Cl. H01L 23/00 (2006.01); H01L 23/495 (2006.01)
CPC H01L 24/45 (2013.01) [H01L 24/48 (2013.01); H01L 23/49582 (2013.01); H01L 24/05 (2013.01); H01L 24/85 (2013.01); H01L 2224/05624 (2013.01); H01L 2224/05638 (2013.01); H01L 2224/05647 (2013.01); H01L 2224/45147 (2013.01); H01L 2224/45565 (2013.01); H01L 2224/45572 (2013.01); H01L 2224/45601 (2013.01); H01L 2224/45617 (2013.01); H01L 2224/45644 (2013.01); H01L 2224/45664 (2013.01); H01L 2224/4852 (2013.01); H01L 2224/48247 (2013.01); H01L 2224/48465 (2013.01); H01L 2224/48839 (2013.01); H01L 2224/48844 (2013.01); H01L 2224/85045 (2013.01); H01L 2224/85181 (2013.01); H01L 2224/85379 (2013.01); H01L 2224/85395 (2013.01); H01L 2224/85439 (2013.01); H01L 2224/85444 (2013.01); H01L 2924/01014 (2013.01); H01L 2924/01016 (2013.01); H01L 2924/01034 (2013.01); H01L 2924/01052 (2013.01); H01L 2924/10253 (2013.01); H01L 2924/20104 (2013.01); H01L 2924/20105 (2013.01); H01L 2924/20751 (2013.01); H01L 2924/20752 (2013.01)] 13 Claims
OG exemplary drawing
 
1. A wire bonding structure, comprising: an aluminum-containing electrode of a semiconductor chip; a bonding wire; and a ball bonding portion between the electrode and the bonding wire, wherein
the bonding wire is a palladium-coated copper bonding wire including: a core material containing copper as a main component; and a palladium layer on the core material and containing a sulfur group element, the palladium-coated copper bonding wire in which with respect to a total of copper, palladium, and the sulfur group element, a concentration of palladium is 1.0 mass % or more and 4.0 mass % or less and a total concentration of the sulfur group element is 50 mass ppm or less, and a concentration of sulfur is 5 mass ppm or more and 12 mass ppm or less, a concentration of selenium is 5 mass ppm or more and 20 mass ppm or less, or a concentration of tellurium is 15 mass ppm or more and 50 mass ppm or less, and
the wire bonding structure includes a palladium-concentrated bonding region with the concentration of palladium being 2.0 mass % or more relative to a total of aluminum, copper, and palladium near a bonding surface of the electrode and the ball bonding portion.