US 11,876,055 B2
Semiconductor device and semiconductor wafer
Kenichi Furuta, Yokohama (JP); Masao Tsujimoto, Yokohama (JP); Nobuhiro Terada, Yokohama (JP); Masahiro Haraguchi, Yokohama (JP); Tsuyoshi Inoue, Yokohama (JP); Yuuichi Kaneko, Yokohama (JP); Hiroki Kuroki, Yokohama (JP); and Takaaki Kodaira, Yokohama (JP)
Assigned to LAPIS SEMICONDUCTOR CO., LTD., Yokohama (JP)
Filed by LAPIS Semiconductor Co., Ltd., Yokohama (JP)
Filed on Oct. 21, 2021, as Appl. No. 17/507,361.
Claims priority of application No. 2020-178408 (JP), filed on Oct. 23, 2020.
Prior Publication US 2022/0130772 A1, Apr. 28, 2022
Int. Cl. H01L 21/762 (2006.01); H01L 21/76 (2006.01); H01L 23/00 (2006.01)
CPC H01L 23/562 (2013.01) [H01L 21/7602 (2013.01); H01L 21/76232 (2013.01)] 4 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a semiconductor substrate formed of silicon carbide with a 4H—SiC crystal structure, components being formed at one surface of the semiconductor substrate, and the semiconductor substrate being formed in a rectangular shape in plan view;
a periphery portion disposed at a pre-specified region of a periphery of the semiconductor substrate, the components not being formed at the periphery portion; and
a plurality of trenches or portions of trenches formed at the periphery portion, each of the trenches being formed in a polygonal shape in plan view,
wherein a side of the semiconductor substrate in one direction is parallel with a direction of a crystal axis of the crystal structure, and at least one side in plan view of each of the trenches is orthogonal to the direction of the crystal axis.