US 11,876,048 B2
Memory device and method of manufacturing the same
Wen-Chieh Tsai, Taichung (TW); Cheng-Ta Yang, Taichung (TW); and Tsung-Wei Lin, Taichung (TW)
Assigned to Winbond Electronics Corp., Taichung (TW)
Filed by Winbond Electronics Corp., Taichung (TW)
Filed on Oct. 19, 2021, as Appl. No. 17/504,546.
Prior Publication US 2023/0118367 A1, Apr. 20, 2023
Int. Cl. H01L 21/00 (2006.01); H01L 23/528 (2006.01); H01L 21/768 (2006.01)
CPC H01L 23/528 (2013.01) [H01L 21/76816 (2013.01)] 9 Claims
OG exemplary drawing
 
1. A memory device, comprising:
a substrate;
a plurality of word lines, extending in a first direction, arranged in a second direction, and disposed on the substrate;
a dummy structure, adjacent to ends of the word lines, and disposed on the substrate, wherein the dummy structure comprises:
a main part, extending in the second direction;
a plurality of extension parts, extending in the first direction, connected to the main part, and interposed between the main part and the word lines; and
a plurality of landing pads extending in the second direction and respectively connected to a plurality of other word lines, wherein the dummy structure is disposed between the landing pads and the word lines.