US 11,876,019 B2
Semiconductor devices and methods of forming the same
Sung-Min Kim, Incheon (KR); Sunhom Steve Paak, Seoul (KR); Heon-Jong Shin, Yongin-si (KR); and Dong-Ho Cha, Seongnam-si (KR)
Assigned to Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Nov. 10, 2021, as Appl. No. 17/523,223.
Application 17/523,223 is a continuation of application No. 16/833,885, filed on Mar. 30, 2020, granted, now 11,201,086.
Application 16/833,885 is a continuation of application No. 15/903,718, filed on Feb. 23, 2018, granted, now 10,643,898, issued on May 5, 2020.
Application 15/903,718 is a continuation of application No. 15/061,200, filed on Mar. 4, 2016, granted, now 9,905,468, issued on Feb. 27, 2018.
Claims priority of application No. 10-2015-0066565 (KR), filed on May 13, 2015.
Prior Publication US 2022/0068718 A1, Mar. 3, 2022
Int. Cl. H01L 27/088 (2006.01); H01L 21/8234 (2006.01)
CPC H01L 21/823431 (2013.01) [H01L 21/823481 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a first trench having a first depth and defining a fin;
a first source/drain region and a second source/drain region on the fin;
a second trench in the fin and between the first source/drain region and the second source/drain region, the second trench having a second depth that is different from the first depth;
a first device isolation layer in the first trench; and
a second device isolation layer in the second trench,
wherein the second device isolation layer includes three isolation layers,
wherein the second device isolation layer includes a first isolation liner extending along a bottom of the second trench and a sidewall of the second trench, a second isolation liner on the first isolation liner and extending along the first isolation liner, and an upper isolation layer on the second isolation liner,
wherein the second isolation liner defines a liner recess,
wherein the upper isolation layer is in the liner recess, and
wherein the second depth is greater than each of a distance between an upper surface of the fin to a lowermost end of the first source/drain region and a distance between the upper surface of the fin to a lowermost end of the second source/drain region.