US 11,875,991 B2
Substrate treatment method and substrate treatment device
Koji Kagawa, Kumamoto (JP)
Assigned to TOKYO ELECTRON LIMITED, Tokyo (JP)
Appl. No. 16/973,554
Filed by Tokyo Electron Limited, Tokyo (JP)
PCT Filed Jun. 4, 2019, PCT No. PCT/JP2019/022225
§ 371(c)(1), (2) Date Dec. 9, 2020,
PCT Pub. No. WO2019/239970, PCT Pub. Date Dec. 19, 2019.
Claims priority of application No. 2018-112512 (JP), filed on Jun. 13, 2018.
Prior Publication US 2021/0257209 A1, Aug. 19, 2021
Int. Cl. H01L 21/02 (2006.01); B08B 3/08 (2006.01); C23F 1/26 (2006.01); H01L 21/67 (2006.01); H01L 21/687 (2006.01)
CPC H01L 21/02057 (2013.01) [B08B 3/08 (2013.01); C23F 1/26 (2013.01); H01L 21/67051 (2013.01); H01L 21/68764 (2013.01)] 7 Claims
OG exemplary drawing
 
1. A substrate treatment method, comprising:
a temperature raising step of raising a temperature of a processing liquid comprising 98% by mass of sulfuric acid, wherein in the temperature raising step, the temperature of the processing liquid comprising 98% by mass of sulfuric acid is raised to a temperature in a range of 130 degrees C. to a boiling point of the processing liquid comprising 98% by mass of sulfuric acid;
a pure water addition step of adding pure water to the processing liquid of which the temperature is raised;
a liquid supply step of supplying the processing liquid to which the pure water is added to a substrate placed on a substrate processing part via a nozzle, wherein the processing liquid supplied to the substrate in the liquid supply step selectively etches one of two kinds of materials contained in a film formed on the substrate; and
a subsequent pure water supply step of supplying pure water to the substrate via the nozzle after the liquid supply step,
wherein, in the pure water addition step, the temperature of the processing liquid is further raised.