US 11,875,978 B2
Plasma processing apparatus and plasma processing method
Tsubasa Okamoto, Tokyo (JP); Tatehito Usui, Tokyo (JP); Miyako Matsui, Tokyo (JP); Shigeru Nakamoto, Tokyo (JP); Naohiro Kawamoto, Tokyo (JP); and Atsushi Sekiguchi, Tokyo (JP)
Assigned to Hitachi High-Tech Corporation, Tokyo (JP)
Appl. No. 17/439,318
Filed by Hitachi High-Tech Corporation, Tokyo (JP)
PCT Filed Jun. 16, 2020, PCT No. PCT/JP2020/023526
§ 371(c)(1), (2) Date Sep. 14, 2021,
PCT Pub. No. WO2021/255812, PCT Pub. Date Dec. 23, 2021.
Prior Publication US 2023/0096723 A1, Mar. 30, 2023
Int. Cl. H01J 37/32 (2006.01); H01L 21/3065 (2006.01); H01L 21/311 (2006.01); H01L 21/66 (2006.01)
CPC H01J 37/32963 (2013.01) [H01L 21/3065 (2013.01); H01L 21/31116 (2013.01); H01L 22/26 (2013.01); H01J 2237/334 (2013.01)] 15 Claims
OG exemplary drawing
 
1. A plasma processing apparatus that performs, on a wafer in which a multilayer film in which an insulating film and a film to be processed containing a metal are alternately laminated is formed on a substrate, plasma etching of the film to be processed, the plasma processing apparatus comprising:
a processing chamber which is disposed inside a vacuum container;
a sample stage which is disposed inside the processing chamber and on which the wafer is placed;
a detection unit which detects reflected light obtained by the wafer reflecting light emitted to the wafer;
a control unit which controls plasma processing on the wafer; and
an end point determination unit which determines an etching end point of the film to be processed based on a change in an amplitude of vibration in a wavelength direction of a light spectrum of the reflected light, wherein
the control unit receives determination of the endpoint made by the end point determination unit and stops the plasma processing on the wafer.