| CPC H01J 37/32724 (2013.01) [H01J 37/3244 (2013.01); H01J 37/32174 (2013.01); H01J 37/32697 (2013.01); H01L 21/67248 (2013.01); H01L 21/6833 (2013.01); H01J 37/32642 (2013.01); H01J 2237/002 (2013.01); H01J 2237/24585 (2013.01)] | 15 Claims |
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1. A plasma processing apparatus comprising:
a chamber body configured to provide a chamber therein;
a stage provided in the chamber, and including an electrostatic chuck configured to hold a substrate;
a gas supply configured to supply a heat transfer gas to an upper surface of the electrostatic chuck on which the substrate is held;
a DC power supply configured to apply a voltage to the electrostatic chuck;
a radio-frequency power supply configured to supply radio frequency waves for generating plasma of a gas in the chamber to an electrode provided in the chamber;
a self-bias voltage meter configured to measure a self-bias voltage generated according to the plasma; and
a controller that executes a control program stored in a storage device to control an overall operation of the plasma processing apparatus,
wherein the controller is configured to control the DC power supply based on an absolute value of the self-bias voltage and a pressure of the heat transfer gas during a plasma processing on the substrate to apply, to the electrostatic chuck, a voltage derived by combining an output of a first function that outputs a smaller value as the absolute value of the self-bias voltage generated according to the plasma becomes larger throughout an entire period in which the self-bias voltage is generated and an output of a second function that outputs a larger value as the pressure of the heat transfer gas supplied to the upper surface of the electrostatic chuck by the gas supply during the plasma processing on the substrate increases, and
the controller is configured to calculate the output of the first function, the output of the second function, and the combination of the output of the first function and the second function.
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