US 11,875,865 B2
Select gate reliability
Falgun G. Trivedi, Boise, ID (US)
Assigned to Micron Technology, Inc., Boise, ID (US)
Filed by Micron Technology, Inc., Boise, ID (US)
Filed on Feb. 11, 2022, as Appl. No. 17/670,111.
Claims priority of provisional application 63/294,706, filed on Dec. 29, 2021.
Prior Publication US 2023/0207029 A1, Jun. 29, 2023
Int. Cl. G11C 11/34 (2006.01); G11C 16/34 (2006.01); G11C 16/26 (2006.01); G11C 16/10 (2006.01)
CPC G11C 16/3495 (2013.01) [G11C 16/102 (2013.01); G11C 16/26 (2013.01); G11C 16/3404 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method, comprising:
determining a programmed threshold voltage for a select gate of a memory string;
assigning the select gate a programmed reliability rank based upon the programmed threshold voltage, wherein the programmed reliability rank indicates that hot data, warm data, or cold data, or any combination thereof are programmable to the memory string;
incrementing a quality characteristic count to a first check voltage value;
determining a first checked threshold voltage for the select gate at the first check voltage value; and
assigning the select gate a first reliability rank based upon the first checked threshold voltage, wherein the first reliability rank indicates that the warm data or the cold data, or both, are programmable to the memory string.