CPC G11C 16/26 (2013.01) [G11C 5/025 (2013.01); G11C 16/14 (2013.01); G11C 29/021 (2013.01); H10B 41/27 (2023.02); H10B 43/27 (2023.02)] | 20 Claims |
1. A method of read voltage threshold calibration in a non-volatile memory, the method comprising:
a controller of the non-volatile memory detecting errors in data read from a particular physical page of the non-volatile memory; and
based on detecting the errors, the controller performing a read voltage threshold calibration for a page group including the particular physical page and a multiple other physical pages, wherein performing the read voltage threshold calibration includes shifting read voltage thresholds of the particular physical page and all of the other multiple physical pages in the page group based on read voltage threshold shifts determined for only the particular physical page of the page group.
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