US 11,875,827 B2
SOT reader using BiSb topological insulator
Quang Le, San Jose, CA (US); Brian R. York, San Jose, CA (US); Xiaoyong Liu, San Jose, CA (US); Son T. Le, San Jose, CA (US); Cherngye Hwang, San Jose, CA (US); Michael A. Gribelyuk, San Jose, CA (US); Xiaoyu Xu, San Jose, CA (US); Kuok San Ho, Emerald Hills, CA (US); Hisashi Takano, San Jose, CA (US); Julian Sasaki, Tokyo (JP); Huy H. Ho, Tokyo (JP); Khang H. D. Nguyen, Tokyo (JP); and Nam Hai Pham, Tokyo (JP)
Assigned to Western Digital Technologies, Inc., San Jose, CA (US)
Filed by Western Digital Technologies, Inc., San Jose, CA (US); and Tokyo Institute of Technology, Tokyo (JP)
Filed on Mar. 25, 2022, as Appl. No. 17/705,147.
Prior Publication US 2023/0306993 A1, Sep. 28, 2023
Int. Cl. G11B 5/39 (2006.01); G11B 5/00 (2006.01)
CPC G11B 5/39 (2013.01) [G11B 2005/0021 (2013.01); G11B 2005/3996 (2013.01)] 29 Claims
OG exemplary drawing
 
1. A spin-orbit torque (SOT) device, comprising:
a first non-magnetic layer;
a first free layer disposed in contact with the first non-magnetic layer;
a first bismuth antimony (BiSb) layer disposed over the first free layer; and
an interlayer disposed between the first free layer and the first BiSb layer, wherein the first BiSb layer, the interlayer, and the first free layer have collective thickness between about 5 nm to about 20 nm.