US 11,875,058 B2
Data storage device and non-volatile memory control method
Po-Sheng Chou, Hsinchu County (TW); and Hsiang-Yu Huang, Taoyuan (TW)
Assigned to Silicon Motion, Inc., Jhubei (TW)
Filed by Silicon Motion, Inc., Hsinchu County (TW)
Filed on Jan. 24, 2022, as Appl. No. 17/648,679.
Claims priority of application No. 110106464 (TW), filed on Feb. 24, 2021.
Prior Publication US 2022/0269443 A1, Aug. 25, 2022
Int. Cl. G06F 12/00 (2006.01); G06F 3/06 (2006.01)
CPC G06F 3/0659 (2013.01) [G06F 3/0619 (2013.01); G06F 3/0679 (2013.01)] 16 Claims
OG exemplary drawing
 
1. A data storage device, comprising:
a non-volatile memory; and
a controller, coupled to the non-volatile memory to access the non-volatile memory through multiple channels,
wherein:
when reading a read target on the non-volatile memory, the controller increases a read count of a monitored unit to which the read target belongs and, based on the read count, determines whether to move data of the monitored unit covering the read target to a safe space;
the monitored unit is smaller than a cross-channel management unit in size;
the controller accesses a parallel accessing space of the non-volatile memory in parallel through all of the channels and allocate the parallel accessing space based on the cross-channel management unit;
the non-volatile memory includes a pseudo-single-level cell storage area and a multi-level cell storage area;
when the read target is within the pseudo-single-level cell storage area and the read count is above a third threshold, the controller moves the data of the monitored unit covering the read target to the safe space;
when the read target is within the multi-level cell storage area and the read count is above a fourth threshold, the controller moves the data of the monitored unit covering the read target to the safe space; and
the third threshold is higher than the fourth threshold.