US 11,874,737 B2
Data storage device and selecting bad data column method thereof
Sheng-Yuan Huang, New Taipei (TW)
Assigned to Silicon Motion, Inc., Jhubei (TW)
Filed by Silicon Motion, Inc., Jhubei (TW)
Filed on Apr. 7, 2022, as Appl. No. 17/715,061.
Claims priority of application No. 110140660 (TW), filed on Nov. 2, 2021.
Prior Publication US 2023/0137485 A1, May 4, 2023
Int. Cl. G06F 11/10 (2006.01); G06F 11/07 (2006.01); G06F 3/06 (2006.01)
CPC G06F 11/1068 (2013.01) [G06F 3/0619 (2013.01); G06F 3/0644 (2013.01); G06F 3/0679 (2013.01); G06F 11/076 (2013.01); G06F 11/0772 (2013.01)] 8 Claims
OG exemplary drawing
 
1. A selecting bad data column method, applied to a data storage device, wherein the data storage device comprises a control unit and a data storage medium, and the data storage medium comprises a plurality of data columns, and the control unit executes the selecting bad data column method comprising:
reading written data of each data column as read data;
comparing the read data and the written data of each data column to calculate an average number of error bits of each data column;
determining whether the average number of error bits of each data column is greater than or equal to a predetermined value; and
recording a data column as a bad data column when the average number of error bits of the data column is greater than or equal to the predetermined value;
wherein, the predetermined value is an average number of error bits that can be corrected by an error correction code of the data storage device.