US 11,874,480 B2
Plasmonic lithography for patterning high aspect-ratio nanostructures
Lingjie Jay Guo, Ann Arbor, MI (US); and Xi Chen, San Jose, CA (US)
Assigned to THE REGENTS OF THE UNIVERSITY OF MICHIGAN, Ann Arbor, MI (US)
Appl. No. 16/956,334
Filed by THE REGENTS OF THE UNIVERSITY OF MICHIGAN, Ann Arbor, MI (US)
PCT Filed Dec. 20, 2018, PCT No. PCT/US2018/066869
§ 371(c)(1), (2) Date Jun. 19, 2020,
PCT Pub. No. WO2019/126543, PCT Pub. Date Jun. 27, 2019.
Claims priority of provisional application 62/608,379, filed on Dec. 20, 2017.
Prior Publication US 2020/0319382 A1, Oct. 8, 2020
Int. Cl. G02B 5/00 (2006.01); G02B 1/00 (2006.01); G02B 5/18 (2006.01)
CPC G02B 5/008 (2013.01) [G02B 1/002 (2013.01); G02B 5/1809 (2013.01)] 15 Claims
OG exemplary drawing
 
1. A method for plasmonic lithography comprising:
passing electromagnetic radiation having a predetermined wavelength into a plasmonic device that comprises a photomask having a plurality of openings with an index matching layer disposed in the plurality of the openings and an optical epsilon-near-zero (ENZ) metamaterial structure having an effective in-plane permittivity of approximately 0, a multilayered stack that comprises at least one metal layer and at least one dielectric material layer, wherein the electromagnetic radiation generates a single plasmonic mode inside the optical epsilon-near-zero (ENZ) metamaterial structure and then passes to a photosensitive material disposed beneath the plasmonic device to form a pattern comprising a nanofeature in the photosensitive material, wherein the nanofeature has at least dimension that is less than ⅓ of the predetermined wavelength; and the photosensitive material is disposed between the optical epsilon-near-zero (ENZ) metamaterial structure and the multilayered stack, wherein the photomask is disposed adjacent to a first side of the optical epsilon-near-zero (ENZ) metamaterial structure and the photosensitive material is disposed adjacent to a second side of the optical epsilon-near-zero (ENZ) metamaterial structure opposite to the first side.