CPC G02B 5/008 (2013.01) [G02B 1/002 (2013.01); G02B 5/1809 (2013.01)] | 15 Claims |
1. A method for plasmonic lithography comprising:
passing electromagnetic radiation having a predetermined wavelength into a plasmonic device that comprises a photomask having a plurality of openings with an index matching layer disposed in the plurality of the openings and an optical epsilon-near-zero (ENZ) metamaterial structure having an effective in-plane permittivity of approximately 0, a multilayered stack that comprises at least one metal layer and at least one dielectric material layer, wherein the electromagnetic radiation generates a single plasmonic mode inside the optical epsilon-near-zero (ENZ) metamaterial structure and then passes to a photosensitive material disposed beneath the plasmonic device to form a pattern comprising a nanofeature in the photosensitive material, wherein the nanofeature has at least dimension that is less than ⅓ of the predetermined wavelength; and the photosensitive material is disposed between the optical epsilon-near-zero (ENZ) metamaterial structure and the multilayered stack, wherein the photomask is disposed adjacent to a first side of the optical epsilon-near-zero (ENZ) metamaterial structure and the photosensitive material is disposed adjacent to a second side of the optical epsilon-near-zero (ENZ) metamaterial structure opposite to the first side.
|