US 11,874,303 B2
Power semiconductor module with current sensor rotation bar
Tomas Manuel Reiter, Munich (DE); Christoph Koch, Salzkotten (DE); and Dietmar Spitzer, Völkermarkt (AT)
Assigned to Infineon Technologies AG, Neubiberg (DE)
Filed by Infineon Technologies AG, Neubiberg (DE)
Filed on Jul. 6, 2021, as Appl. No. 17/368,213.
Prior Publication US 2023/0009758 A1, Jan. 12, 2023
Int. Cl. G01R 15/20 (2006.01); H05K 1/18 (2006.01); H02M 7/00 (2006.01)
CPC G01R 15/207 (2013.01) [G01R 15/202 (2013.01); H02M 7/003 (2013.01); H05K 1/181 (2013.01); H05K 2201/10151 (2013.01); H05K 2201/10272 (2013.01)] 21 Claims
OG exemplary drawing
 
1. A power semiconductor module, comprising:
an electrically insulative frame having a first mounting side, a second mounting side opposite the first mounting side, and a border wall that defines a periphery of the electrically insulative frame;
a first substrate seated in the electrically insulative frame;
a plurality of power semiconductor dies attached to the first substrate;
a plurality of signal pins attached to the first substrate and electrically connected to the power semiconductor dies;
a busbar attached to the first substrate and extending through the border wall;
a receptacle in the border wall configured to receive a current sensor module and that exposes part of the busbar, the exposed part of the busbar having an opening; and
a first rotation bar jutting out from a first sidewall of the receptacle and onto the exposed part of the busbar without obstructing the opening in the busbar,
wherein the first rotation bar forms an axis of rotation within the receptacle.