US 11,872,043 B2
Thin film support structures
Landy Toth, Doylestown, PA (US); and Robert S. Schwartz, Inver Grove Heights, MN (US)
Assigned to LifeLens Technologies, LLC, Ivyland, PA (US)
Appl. No. 16/315,018
Filed by LifeLens Technologies, LLC, Ivyland, PA (US)
PCT Filed Jul. 10, 2017, PCT No. PCT/US2017/041291
§ 371(c)(1), (2) Date Jan. 3, 2019,
PCT Pub. No. WO2018/013447, PCT Pub. Date Jan. 18, 2018.
Claims priority of provisional application 62/362,313, filed on Jul. 14, 2016.
Prior Publication US 2019/0200890 A1, Jul. 4, 2019
Int. Cl. A61B 5/05 (2021.01); A61B 5/259 (2021.01); A61B 5/145 (2006.01); B32B 7/06 (2019.01); B32B 7/12 (2006.01); B32B 3/06 (2006.01); B32B 3/08 (2006.01); A61B 5/15 (2006.01); B32B 27/32 (2006.01); B32B 27/34 (2006.01); B32B 27/36 (2006.01); B32B 27/40 (2006.01); B32B 27/30 (2006.01); B32B 25/06 (2006.01); B32B 29/00 (2006.01); B32B 3/26 (2006.01); B32B 7/10 (2006.01); B32B 27/28 (2006.01); B32B 27/06 (2006.01); B32B 27/10 (2006.01); B32B 27/12 (2006.01); B32B 27/08 (2006.01); B32B 7/02 (2019.01); B32B 3/10 (2006.01); B32B 25/12 (2006.01); B32B 9/04 (2006.01); B32B 5/18 (2006.01); B32B 25/20 (2006.01); B32B 25/08 (2006.01); B32B 25/14 (2006.01); B32B 25/16 (2006.01); B32B 9/06 (2006.01); B32B 25/10 (2006.01); A61B 5/25 (2021.01)
CPC A61B 5/259 (2021.01) [A61B 5/145 (2013.01); A61B 5/150022 (2013.01); A61B 5/150343 (2013.01); A61B 5/150969 (2013.01); A61B 5/25 (2021.01); B32B 3/06 (2013.01); B32B 3/08 (2013.01); B32B 3/10 (2013.01); B32B 3/26 (2013.01); B32B 3/266 (2013.01); B32B 5/18 (2013.01); B32B 7/02 (2013.01); B32B 7/06 (2013.01); B32B 7/10 (2013.01); B32B 7/12 (2013.01); B32B 9/045 (2013.01); B32B 9/047 (2013.01); B32B 9/06 (2013.01); B32B 25/06 (2013.01); B32B 25/08 (2013.01); B32B 25/10 (2013.01); B32B 25/12 (2013.01); B32B 25/14 (2013.01); B32B 25/16 (2013.01); B32B 25/20 (2013.01); B32B 27/065 (2013.01); B32B 27/08 (2013.01); B32B 27/10 (2013.01); B32B 27/12 (2013.01); B32B 27/281 (2013.01); B32B 27/285 (2013.01); B32B 27/286 (2013.01); B32B 27/306 (2013.01); B32B 27/32 (2013.01); B32B 27/34 (2013.01); B32B 27/36 (2013.01); B32B 27/365 (2013.01); B32B 27/40 (2013.01); B32B 29/007 (2013.01); A61B 2562/028 (2013.01); A61B 2562/12 (2013.01); A61B 2562/125 (2013.01); B32B 2250/02 (2013.01); B32B 2250/03 (2013.01); B32B 2250/44 (2013.01); B32B 2255/10 (2013.01); B32B 2255/205 (2013.01); B32B 2255/26 (2013.01); B32B 2255/28 (2013.01); B32B 2266/12 (2016.11); B32B 2270/00 (2013.01); B32B 2307/202 (2013.01); B32B 2307/308 (2013.01); B32B 2307/51 (2013.01); B32B 2307/546 (2013.01); B32B 2307/706 (2013.01); B32B 2307/732 (2013.01); B32B 2437/00 (2013.01); B32B 2437/02 (2013.01); B32B 2439/46 (2013.01); B32B 2457/00 (2013.01); B32B 2535/00 (2013.01)] 20 Claims
OG exemplary drawing
 
1. An apparatus comprising:
a first support structure comprising an adhesive layer formed over a first carrier;
a film attached to the first support structure and comprising a first pattern of two or more vias formed at least partially therethrough, a first surface of the film being bonded to the adhesive layer of the first support structure;
wherein the film is stretchable in at least a first direction along the first surface; and
at least one functional layer formed over a second surface of the film opposite the first surface of the film, the at least one functional layer comprising one or more wrinkles, the one or more wrinkles having (i) an amplitude oriented substantially in a direction perpendicular to the second surface of the film and (ii) a wavelength propagating substantially along the first direction along the first surface, the one or more wrinkles enabling stretching of the at least one functional layer in the first direction along the first surface;
wherein the first carrier comprises a material having a first rigidity greater than a second rigidity of the film, the first carrier maintaining the first pattern of vias within a given threshold distortion following a given process conducted after the film is attached to the first support structure, the given threshold distortion being at least one of distortion less than 1% in locations of the two or more vias in the pattern of vias before and after the given process, distortion less than 10 micrometers (μm) in the first direction, and distortion in distance between centers of adjacent ones of the vias less than 10 μm.