US 12,201,042 B2
Resistance random access memory device and method for manufacturing same
Hyun Suk Jung, Seoul (KR); SangMyeong Lee, Gimhae-si (KR); Won Bin Kim, Suwon-si (KR); Jae Myeong Lee, Jincheon-gun (KR); Oh Yeong Gong, Suwon-si (KR); Jun Young Kim, Suwon-si (KR); Jin Hyuk Choi, Suwon-si (KR); and ChangHwun Sohn, Busan (KR)
Assigned to Research & Business Foundation Sungkyunkwan University, Suwon-si (KR)
Filed by RESEARCH & BUSINESS FOUNDATION SUNGKYUNKWAN UNIVERSITY, Suwon-si (KR)
Filed on Nov. 16, 2021, as Appl. No. 17/527,648.
Prior Publication US 2022/0158094 A1, May 19, 2022
Int. Cl. H10N 70/00 (2023.01); H10B 63/00 (2023.01)
CPC H10N 70/8836 (2023.02) [H10B 63/20 (2023.02); H10N 70/021 (2023.02); H10N 70/8833 (2023.02); H10N 70/841 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A resistance random access memory device comprising:
a resistance change layer, comprising an organometallic halide having perovskite grains, disposed on a first electrode; and
a second electrode disposed on the resistance change layer,
wherein a boundary between the perovskite grains comprises an amorphous metal oxide, and
wherein halide ions do not pass between the grains due to a boundary between the grains.