US 11,871,679 B2
Voltage-controlled magnetic anisotropy memory device including an anisotropy-enhancing dust layer and methods for forming the same
Alan Kalitsov, San Jose, CA (US); Derek Stewart, Livermore, CA (US); and Bhagwati Prasad, San Jose, CA (US)
Assigned to WESTERN DIGITAL TECHNOLOGIES, INC., San Jose, CA (US)
Filed by WESTERN DIGITAL TECHNOLOGIES, INC., San Jose, CA (US)
Filed on Jun. 7, 2021, as Appl. No. 17/341,049.
Prior Publication US 2022/0393100 A1, Dec. 8, 2022
This patent is subject to a terminal disclaimer.
Int. Cl. G11C 16/04 (2006.01); H10N 50/80 (2023.01); G11C 11/16 (2006.01); H10B 61/00 (2023.01); H10N 50/85 (2023.01)
CPC H10N 50/80 (2023.02) [G11C 11/161 (2013.01); G11C 11/1673 (2013.01); G11C 11/1675 (2013.01); H10B 61/00 (2023.02); H10N 50/85 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A magnetoelectric memory device, comprising:
a first electrode;
a second electrode;
a magnetic tunnel junction located between the first electrode and the second electrode, the magnetic tunnel junction comprising, from a side of the first electrode toward the second electrode, a first reference layer, a nonmagnetic tunnel barrier layer, a first nonmagnetic metal dust layer, a free layer, and a second nonmagnetic metal dust layer; and
a dielectric capping layer located between the magnetic tunnel junction and the second electrode,
wherein the first nonmagnetic metal dust layer and the second nonmagnetic metal dust layer have opposite signs of a voltage-controlled magnetic anisotropy coefficient.