US 11,871,618 B2
Display device having multiple transistors
Dong-Young Kim, Paju-si (KR); Kyoung-Nam Lim, Gyeongsangbuk-do (KR); and Yu-Ho Jung, Paju-si (KR)
Assigned to LG Display Co., Ltd., Seoul (KR)
Filed by LG Display Co., Ltd., Seoul (KR)
Filed on Jan. 4, 2023, as Appl. No. 18/150,113.
Application 18/150,113 is a continuation of application No. 17/735,797, filed on May 3, 2022, granted, now 11,574,977.
Application 17/735,797 is a continuation of application No. 17/005,061, filed on Aug. 27, 2020, granted, now 11,430,848, issued on Aug. 30, 2022.
Application 17/005,061 is a continuation of application No. 16/210,926, filed on Dec. 5, 2018, granted, now 10,847,593, issued on Nov. 24, 2020.
Claims priority of application No. 10-2017-0175054 (KR), filed on Dec. 19, 2017.
Prior Publication US 2023/0144054 A1, May 11, 2023
Int. Cl. G09G 3/32 (2016.01); H10K 59/121 (2023.01); H01L 27/12 (2006.01); G09G 3/3266 (2016.01); G09G 3/3291 (2016.01); H01L 29/786 (2006.01); H10K 50/11 (2023.01); H10K 59/35 (2023.01); H10K 59/122 (2023.01); H10K 59/123 (2023.01); H10K 59/124 (2023.01); H10K 59/126 (2023.01); H10K 59/131 (2023.01); H10K 77/10 (2023.01); H10K 102/00 (2023.01)
CPC H10K 59/1213 (2023.02) [G09G 3/3266 (2013.01); G09G 3/3291 (2013.01); H01L 27/124 (2013.01); H01L 27/1218 (2013.01); H01L 27/1225 (2013.01); H01L 27/1244 (2013.01); H01L 27/1255 (2013.01); H01L 29/78633 (2013.01); H10K 50/11 (2023.02); H10K 59/122 (2023.02); H10K 59/123 (2023.02); H10K 59/124 (2023.02); H10K 59/126 (2023.02); H10K 59/1216 (2023.02); H10K 59/131 (2023.02); H10K 59/35 (2023.02); H10K 77/111 (2023.02); G09G 2300/0426 (2013.01); G09G 2300/0452 (2013.01); G09G 2330/021 (2013.01); H10K 59/352 (2023.02); H10K 59/353 (2023.02); H10K 2102/341 (2023.02)] 12 Claims
OG exemplary drawing
 
1. A display device comprising:
a flexible substrate comprising an active area and a bending area;
a first thin-film transistor disposed in the active area, the first thin-film transistor comprising a polycrystalline semiconductor layer, a first gate electrode, a first source electrode, and a first drain electrode;
a second thin-film transistor disposed in the active area, the second thin-film transistor comprising an oxide semiconductor layer, a second gate electrode, a second source electrode, and a second drain electrode;
a first planarization layer covering the first thin-film transistor and the second thin-film transistor in the active area, the first planarization layer extending to the bending area;
a connection electrode disposed on the first planarization layer;
a second planarization layer disposed on the first planarization layer including the connection electrode in the active area and the bending area; and
a light emitting element disposed on the first planarization layer in the active area, the light emitting element having an anode and a light emitting stack,
wherein the light emitting stack includes at least one light emitting layer.