US 11,871,589 B2
Memory device having 2-transistor memory cell and access line plate
Kamal M. Karda, Boise, ID (US); Karthik Sarpatwari, Boise, ID (US); Haitao Liu, Boise, ID (US); and Durai Vishak Nirmal Ramaswamy, Boise, ID (US)
Assigned to Micron Technology, Inc., Boise, ID (US)
Filed by Micron Technology, Inc., Boise, ID (US)
Filed on May 16, 2022, as Appl. No. 17/745,298.
Application 17/745,298 is a continuation of application No. 17/003,077, filed on Aug. 26, 2020, granted, now 11,335,684.
Claims priority of provisional application 62/892,995, filed on Aug. 28, 2019.
Prior Publication US 2022/0278103 A1, Sep. 1, 2022
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 27/00 (2006.01); H01L 29/00 (2006.01); H10B 99/00 (2023.01); H01L 27/12 (2006.01); H01L 29/788 (2006.01); H01L 29/24 (2006.01); H01L 29/786 (2006.01)
CPC H10B 99/00 (2023.02) [H01L 27/124 (2013.01); H01L 27/1225 (2013.01); H01L 27/1251 (2013.01); H01L 29/24 (2013.01); H01L 29/7869 (2013.01); H01L 29/7881 (2013.01); H01L 29/78672 (2013.01)] 20 Claims
OG exemplary drawing
 
1. An apparatus comprising:
a substrate;
a pillar extending in a direction perpendicular to the substrate;
a first conductive region located in a first level of the apparatus, the first conductive region being separated from the pillar by a first dielectric located in the first level;
a second conductive region located in a second level of the apparatus, the second conductive region being separated from the pillar by a second dielectric located in the second level;
a memory cell located between the first and second conductive regions and electrically separated from the first and second conductive regions, the memory cell including a first material located in a third level of the apparatus between the first and second levels and coupled to the pillar, and a second material located in a fourth level of the apparatus between the first and second levels and coupled to the pillar, the first and second materials having different conductivity types; and
a conductive connection coupled to the first material.