CPC H10B 12/485 (2023.02) | 20 Claims |
1. A method of forming a contact, the method comprising:
providing a semiconductor substrate comprising a silicon oxide film to an interior of a chamber;
subjecting a surface of the silicon oxide film to plasma nitrification treatment;
supplying a source gas including TiCl4 and H2 onto the silicon oxide film subjected to the plasma nitrification treatment; and
forming a barrier layer by igniting a plasma using the source gas.
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