US 11,871,558 B2
Semiconductor memory device and method for manufacturing the same
Yong-Hoon Son, Yongin-si (KR); Jae Hoon Kim, Seoul (KR); Kwang-ho Park, Cheonan-si (KR); and Seungjae Jung, Suwon-si (KR)
Assigned to Samsung Electronics Co., Ltd., Gyeonggi-do (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Oct. 11, 2022, as Appl. No. 17/963,591.
Application 17/963,591 is a continuation of application No. 17/038,355, filed on Sep. 30, 2020, granted, now 11,502,086.
Claims priority of application No. 10-2019-0168208 (KR), filed on Dec. 16, 2019.
Prior Publication US 2023/0031207 A1, Feb. 2, 2023
Int. Cl. H01L 29/786 (2006.01); H10B 12/00 (2023.01); H01L 29/06 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 21/02 (2006.01); H01L 21/306 (2006.01); H01L 21/285 (2006.01)
CPC H10B 12/30 (2023.02) [H01L 21/02603 (2013.01); H01L 21/28518 (2013.01); H01L 21/30604 (2013.01); H01L 29/0673 (2013.01); H01L 29/42392 (2013.01); H01L 29/66742 (2013.01); H01L 29/78696 (2013.01); H10B 12/01 (2023.02); H10B 12/05 (2023.02); H10B 12/482 (2023.02); H10B 12/50 (2023.02)] 20 Claims
OG exemplary drawing
 
14. A method for manufacturing a semiconductor memory device, the method comprising:
forming a stack structure including a plurality of semiconductor layers vertically stacked on a substrate;
forming a first hole and a second hole, the first hole and the second hole penetrating the stack structure;
partially etching the plurality of semiconductor layers exposed by the first and second holes to divide each of the plurality of semiconductor layers into a pair of semiconductor patterns;
forming a vertical insulator filling the first and second holes;
forming a gate electrode on the pair of semiconductor patterns;
forming a bit line on a side of the stack structure, the bit line extending vertically;
replacing a portion of each of the semiconductor patterns with a first electrode, the first electrode extending horizontally;
forming a second electrode on the first electrode; and
forming a dielectric layer between the first electrode and the second electrode.