CPC H10B 12/30 (2023.02) [H01L 29/7869 (2013.01); H01L 29/78642 (2013.01)] | 15 Claims |
1. A semiconductor device comprising: a first electrode; a second electrode; an oxide semiconductor layer provided between the first electrode and the second electrode; a gate electrode opposed to the oxide semiconductor layer; a gate insulating layer provided between the oxide semiconductor layer and the gate electrode; a first insulating layer provided between the gate electrode and the first electrode; and a second insulating layer provided between the gate electrode and the second electrode, and the second insulating layer having an oxygen atom concentration lower than an oxygen atom concentration of the first insulating layer, and further comprising a substrate, the first electrode provided between the substrate and the second electrode.
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