US 11,871,503 B2
Plasma processing method and plasma processing apparatus
Takashi Dokan, Miyagi (JP); Shinji Kubota, Miyagi (JP); and Chishio Koshimizu, Miyagi (JP)
Assigned to TOKYO ELECTRON LIMITED, Tokyo (JP)
Filed by Tokyo Electron Limited, Tokyo (JP)
Filed on Feb. 4, 2022, as Appl. No. 17/592,509.
Application 17/592,509 is a continuation of application No. 16/979,655, granted, now 11,337,297, previously published as PCT/JP2019/022952, filed on Jun. 10, 2019.
Claims priority of application No. 2018-119087 (JP), filed on Jun. 22, 2018.
Prior Publication US 2022/0159820 A1, May 19, 2022
This patent is subject to a terminal disclaimer.
Int. Cl. H05H 1/46 (2006.01); H01J 37/32 (2006.01); H01L 21/3065 (2006.01); H01L 21/311 (2006.01)
CPC H05H 1/46 (2013.01) [H01J 37/32183 (2013.01); H01L 21/3065 (2013.01); H01L 21/31116 (2013.01); H01J 2237/334 (2013.01)] 9 Claims
OG exemplary drawing
 
1. An RF system used in a plasma processing apparatus, the RF system comprising:
a first RF power supply configured to generate a bias RF power having a first frequency, wherein a waveform defined by the first frequency has a plurality of cycles each divided into a first half cycle and a second half cycle;
a second RF power supply configured to generate a source RF power having a second frequency higher than the first frequency; and
a controller configured to
(a) in a first period, control the second RF power supply such that the source RF power is generated during at least a portion of the first half cycle, and is not generated during the second half cycle, and
(b) in a second period, control the second RF power supply such that the source RF power is generated during at least a portion of the second half cycle, and is not generated during the first half cycle.