US 11,870,369 B2
Microelectronics device and method for producing a microelectronics device
Jochen Tomaschko, Gaeufelden (DE); Christoph Kaiser, Reutlingen (DE); Timo Schary, Aichtal-Neuenhaus (DE); and Daniel Monteiro Diniz Reis, Esslingen Am Neckar (DE)
Assigned to ROBERT BOSCH GMBH, Stuttgart (DE)
Filed by Robert Bosch GmbH, Stuttgart (DE)
Filed on Apr. 14, 2021, as Appl. No. 17/230,364.
Claims priority of application No. 102020204969.6 (DE), filed on Apr. 20, 2020.
Prior Publication US 2021/0328524 A1, Oct. 21, 2021
Int. Cl. H02N 2/02 (2006.01); H02N 2/00 (2006.01); G02B 26/08 (2006.01); G02B 26/10 (2006.01); H10N 30/06 (2023.01); H10N 30/87 (2023.01)
CPC H02N 2/028 (2013.01) [G02B 26/0833 (2013.01); G02B 26/101 (2013.01); H02N 2/22 (2013.01); H10N 30/06 (2023.02); H10N 30/87 (2023.02)] 13 Claims
OG exemplary drawing
 
1. A microelectronics device, comprising:
at least one bearer substrate; and
at least one layered piezo stack situated on the bearer substrate, the piezo stack having at least one piezo element and at least one electrode; and
at least one contact opening situated on the at least one electrode;
wherein:
the microelectronics device has at least one diffusion blocking element that is situated on the at least one electrode at least partly at a distance from the piezo element, and/or
the at least one contact opening forms a contact surface that is at most as large as one one-thousandth of a surface of the at least one piezo element, and/or
a length of an electrical path from the at least one contact opening to the at least one piezo element corresponds to at least twice a circumference of the at least one contact opening.