CPC H01S 3/041 (2013.01) [H01S 3/042 (2013.01); H01S 3/06779 (2013.01); H01S 3/06783 (2013.01); H01S 3/2308 (2013.01)] | 14 Claims |
1. A processing chamber, comprising:
a power source;
an amplifier connected to the power source, comprising at least one of a gallium nitride (GaN) transistor or a gallium arsenide (GaAs) transistor, and
configured to amplify a power level of an input signal received from the power source to heat a substrate in a process volume;
a cooling plate configured to receive a coolant to cool the amplifier during operation, wherein the cooling plate includes a plurality of cooling channels configured to allow the coolant to flow within the cooling plate; and
a controller in communication with the amplifier and configured to control a flow of the coolant through the plurality of cooling channels.
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