US 11,870,008 B2
Nanorod light-emitting device and method of manufacturing the same
Jinjoo Park, Yongin-si (KR); Junhee Choi, Seongnam-si (KR); Nakhyun Kim, Yongin-si (KR); Dongho Kim, Seoul (KR); and Joohun Han, Hwaseong-si (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Apr. 12, 2021, as Appl. No. 17/227,538.
Claims priority of application No. 10-2020-0110599 (KR), filed on Aug. 31, 2020.
Prior Publication US 2022/0069161 A1, Mar. 3, 2022
Int. Cl. H01L 33/14 (2010.01); H01L 33/04 (2010.01); H01L 33/00 (2010.01); H01L 27/15 (2006.01); H01L 33/56 (2010.01)
CPC H01L 33/145 (2013.01) [H01L 27/156 (2013.01); H01L 33/005 (2013.01); H01L 33/04 (2013.01); H01L 33/56 (2013.01)] 22 Claims
OG exemplary drawing
 
1. A nanorod light-emitting device comprising:
a first semiconductor layer doped with a first conductivity type;
a light-emitting layer on the first semiconductor layer;
a second semiconductor layer disposed on the light-emitting layer and doped with a second conductivity type that is electrically opposite to the first conductivity type;
at least one conductive layer disposed between a central portion of a lower surface of the light-emitting layer and the first semiconductor layer, or between a central portion of an upper surface of the light-emitting layer and the second semiconductor layer;
at least one current blocking layer that surrounds a side surface of the at least one conductive layer; and
an insulating film that surrounds a side surface of the second semiconductor layer, a side surface of the light-emitting layer, and a side surface of the at least one current blocking layer,
wherein a diameter of the first semiconductor layer of the nanorod light-emitting device and an outer diameter of the insulating film of the nanorod light-emitting device are both in a range of 0.05 μm to 2 μm, and
wherein an upper surface of the first semiconductor layer contacts a lower surface of the insulating film.