US 11,869,978 B2
Liquid crystal display device
Tetsuji Ishitani, Isehara (JP); and Daisuke Kubota, Isehara (JP)
Assigned to Semiconductor Energy Laboratory Co., Ltd., Kanagawa-ken (JP)
Filed by Semiconductor Energy Laboratory Co., Ltd., Atsugi (JP)
Filed on Apr. 15, 2021, as Appl. No. 17/231,304.
Application 17/231,304 is a continuation of application No. 16/377,620, filed on Apr. 8, 2019, granted, now 10,985,282.
Application 16/377,620 is a continuation of application No. 15/718,243, filed on Sep. 28, 2017, granted, now 10,424,674, issued on Sep. 24, 2019.
Application 15/718,243 is a continuation of application No. 13/890,421, filed on May 9, 2013, granted, now 10,008,608, issued on Jun. 26, 2018.
Application 13/890,421 is a continuation of application No. 12/624,863, filed on Nov. 24, 2009, granted, now 8,441,425, issued on May 14, 2013.
Claims priority of application No. 2008-304243 (JP), filed on Nov. 28, 2008.
Prior Publication US 2021/0265505 A1, Aug. 26, 2021
Int. Cl. H01L 29/786 (2006.01); G02F 1/1335 (2006.01); H01L 27/12 (2006.01); G02F 1/1368 (2006.01); G02F 1/1362 (2006.01)
CPC H01L 29/7869 (2013.01) [G02F 1/1368 (2013.01); G02F 1/133514 (2013.01); H01L 27/1225 (2013.01); H01L 27/1248 (2013.01); G02F 1/136209 (2013.01); G02F 1/136222 (2021.01); H01L 29/78618 (2013.01)] 14 Claims
OG exemplary drawing
 
1. A liquid crystal display device comprising:
a gate wiring layer;
a transistor comprising an oxide semiconductor layer overlapping with the gate wiring layer;
a first insulating film over each of the transistor and the gate wiring layer;
a light-transmitting chromatic color resin layer above the first insulating film;
a first electrode layer above the light-transmitting chromatic color resin layer and electrically connected to the transistor;
a second insulating film above the first electrode layer;
a second electrode layer above the second insulating film;
a liquid crystal layer above each of the first electrode layer and the second electrode layer; and
a wiring layer below the first insulating film and electrically connected to the second electrode layer,
wherein the light-transmitting chromatic color resin layer overlaps with the transistor,
wherein in a plan view the wiring layer extends a direction generally parallel to the gate wiring layer,
wherein in the plan view the second electrode layer comprises a first portion generally parallel to the gate wiring layer and a second portion having a comb-shape,
wherein the oxide semiconductor layer includes a crystal having a diameter of 1 nm to 10 nm, and
wherein the crystal contains indium, gallium, and zinc.