US 11,869,961 B2
Semiconductor device and method of manufacturing semiconductor device
Hiroshi Miyata, Matsumoto (JP); Seiji Noguchi, Matsumoto (JP); Souichi Yoshida, Matsumoto (JP); Hiromitsu Tanabe, Kariya (JP); Kenji Kouno, Kariya (JP); and Yasushi Okura, Kariya (JP)
Assigned to FUJI ELECTRIC CO., LTD., Kawasaki (JP)
Filed by FUJI ELECTRIC CO., LTD., Kawasaki (JP); and DENSO CORPORATION, Kariya (JP)
Filed on Jan. 19, 2022, as Appl. No. 17/578,996.
Application 17/578,996 is a division of application No. 16/204,791, filed on Nov. 29, 2018, granted, now 11,264,490.
Application 16/204,791 is a continuation of application No. PCT/JP2017/033604, filed on Sep. 15, 2017.
Claims priority of application No. 2016-183126 (JP), filed on Sep. 20, 2016.
Prior Publication US 2022/0140121 A1, May 5, 2022
Int. Cl. H01L 29/739 (2006.01); H01L 29/08 (2006.01); H01L 29/10 (2006.01); H01L 29/66 (2006.01); H01L 29/423 (2006.01); H01L 21/768 (2006.01); H01L 29/40 (2006.01); H01L 29/06 (2006.01); H01L 29/861 (2006.01); H01L 29/417 (2006.01); H01L 29/45 (2006.01)
CPC H01L 29/7397 (2013.01) [H01L 21/76816 (2013.01); H01L 29/0696 (2013.01); H01L 29/0804 (2013.01); H01L 29/0821 (2013.01); H01L 29/0834 (2013.01); H01L 29/1004 (2013.01); H01L 29/401 (2013.01); H01L 29/417 (2013.01); H01L 29/42368 (2013.01); H01L 29/42376 (2013.01); H01L 29/456 (2013.01); H01L 29/66348 (2013.01); H01L 29/7396 (2013.01); H01L 29/8613 (2013.01)] 9 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a trench provided at a predetermined depth from a first main surface of a semiconductor substrate;
a gate electrode provided via a gate insulating film in the trench;
an insulating film provided on the first main surface of the semiconductor substrate and covering the gate electrode;
a contact hole penetrating the insulating film in a depth direction and reaching the semiconductor substrate;
a first groove provided in a semiconductor part of the semiconductor substrate exposed in the contact hole,
a metal film provided from a side wall of the contact hole and along an inner wall of the first groove, the metal film adhering to the semiconductor part;
a second groove provided in a part of the metal film and penetrating the metal film in a direction of thickness and reaching a surface of the insulating film facing toward the first electrode;
a metal layer embedded in the metal film in the contact hole; and
a first electrode provided at a surface of the metal layer and the insulating film, wherein
a surface of the gate electrode is positioned within the trench.