CPC H01L 29/0657 (2013.01) [H01L 29/42392 (2013.01); H01L 29/66742 (2013.01); H01L 29/78642 (2013.01); H01L 29/78648 (2013.01); H01L 29/78696 (2013.01)] | 16 Claims |
1. A semiconductor device comprising:
a fin structure including a recess formed in an upper surface of the fin structure;
a conductor formed in an upper surface of the fin structure;
an inner gate formed in the recess of the fin structure; and
an outer gate formed outside and around the fin structure.
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